PART |
Description |
Maker |
MRFG35003MT1 MRFG35003NT1 |
RF REFERENCE DESIGN LIBRARY GALLIUM ARSENIDE PHEMT
|
Freescale Semiconductor, Inc
|
MRFG35010NT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35005ANT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010AR1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MGRB2025CT MGRB2025CT_D ON1884 |
From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|
WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
GN04005 |
Gallium Arsenide Devices
|
Panasonic
|